PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC38V5867 |
5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V3742A |
3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC47V5864 |
5.8 - 6.4 GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
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